Post on 03-Jan-2016
description
1
Tecnologia CMOS
I passi principali per la realizzazione
di transistori a canale n e a canale p
2p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
input
outputGND VDD
3
input
outputGND VDD
p substrate
n-wellp+p+ p+n+n+ n+
+SiO2
+SiO2
4
p substrate
SiO2
photoresist
n-well mask
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
5
p substrate
SiO2
photoresist
n-well
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
6
p substrate
n-well
Nitride
active mask
photoresist
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
7
p substrate
channel stop mask
n-well
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
8
p substrate
n-well
n-well mask
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
9
p substrate
n-well
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
10
p substrate
n-wellgate oxide
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
11
p substrate
n-well
polysilicon
mask
polysilicon
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
12
p substrate
n-welln+n+ n+
p substrate
n-well
n+ mask
gates
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
13
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
p+ mask
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
14
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
15
contact mask
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
16
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
metal1 mask
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
17
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
l w
l R =
t w= RS
l w
= R
l w t
input
outputGND VDD
18
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
19
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
20
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
input
outputGND VDD
21
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+
22
p substrate
n-wellp+p+ p+
p substrate
n-welln+n+ n+