ISTITUTO DEI MATERIALI PER L’ELETTRONICA ED IL MAGNETISMOSede: Parma - UOS: Genova, Trento, Torino

Sputtering

-800

-400

0

400

800

//

-15 -10 -5 0 5 10 15

Mag

ne

tisatio

n (

em

u/c

m3)

Magnetic field (kOe)

1x1014

ions/cm2

A1

10 m

m

MFM

EF-FETEM

0.136 nm [110]

0.5 nmSi

0 100 200 300 400 500Energy Loss (eV)

Inte

nsity

(arb

. uni

t)C-K edge

Zero loss

low gain

high gain

Plasmon loss

CL l = 381 nm

CL l = 515 nm

ZnO TP SEI

SnO2 NBs

Chocralski CdTe

CZT X-ray det. response

Inorg/Inorg Org/Inorg - 1

InN/InGaN InN/Dyes

Org/Inorg - 2

ZnO/Dyes

Ab initio calculations

MBE

MAP of the LABS

Homo- (a) and hetero- (b)Synaptic junctions

Model of learning for LimneaStagnalis: association of the mechanical stimulus with presence of food

Organic Bioelectronics and Memristors

SYNAPSES

Photolithography

Metallization

Reactive

ion

etching

Wire bonding

Nanosystem for drug delivery i.e. based on Magnetic NP

Nanosystems for Photodynamic therapy

Polyelectrolyte capsules

Rom

a, 9

Set

tem

bre

2013

Thin Film Photovoltaic

Modules

X-ray Detectors and Monochromators

Magnetic Sensors for Electric Vehicles

Magnetic Refrigerators

Photovoltaic Cells for Infrared Radiation

Gas & OV Sensors

HumiditySensors

1

2

3

6

4

5

7

8

SuperconductingPower Cables

Role of IMEM-CNR

materials engineering

technology development

prototype manufacturing

Products developed

with industrial partners

Bio-electronics

and Bio-Sensors