Le tecnologie elettroniche ed informatiche a servizio della gestione energetica

Le tecnologie Elettroniche e Informatiche al servizio della gestione energetica

Enrico Sangiorgi

“Ridurre i costi energetici in azienda: dagli scenari ai meccanismi di incentivazione”

Workshop

Logo azienda/università


OUTLINE

• Smart grid and renewable energy sources integration

• Smart buildings

• Power conversion

• Photovoltaic systems and overview of solar cell technology

Smart Grid Scenario

Integration of renewable energy

Energy efficient transmission

EV charging and energy storage

Smart metering

Energy efficient consumption

Energy efficient consumption


Energy to Smart Grid


Outline


• Smart building




Smart Building• Distributed energy consumption profiler at building level with integration of heterogeneous protocols

• Interactions with the central data processing unit in order to elaborate energy consumption profiles at building level

building level

network

floor/apartment network(e.g. Zigbee, Bluetooth, etc.)

Connectionto building

level network(e.g. Wi-fi,PLC, etc.)


Smart Metering and Local Collection

• Miniaturized sensor system are used for monitoring local power consumption

• Local collection (e.g. apartment level) of power/energy consumption data through a low-power IEEE802.15.4 wireless network (e.g. Zigbee/Bluetooth/etc. nodes).

• Bridge to an external higher level network connection (e.g. Wi-Fi, or PowerLine Communication) for transferring data at building level.

floor/apartment network(e.g. Zigbee, Bluetooth, etc.)

Connectionto building

level network(e.g. Wi-fi,PLC, etc.)


Building Level Network• A building level network collects

data from all local networks through the bridge nodes

• Possible architectures for the building network based on:– Internet– Power Line Communication

• All collected data transferred to a server database. Profiles and consumption data can be extracted.

building level

network


Outline


• Smart building




Power Converters

• Si-based power transistors (i.e. IGBT, power MOSFET, Thyristor) are implemented in converters for optimal power transfer to the grid

• SiC FET or GaN HEMT allows to increase BV with respect to Si devices because of the higher bandgap. Alternatively, for a given BV, a lower RDSON can be achieved.

ST AN3152 Application note

BV=600-650V

M. Trey et al., IEDM 2012


Reliability of Power MOSFETsAn experimental setup has been implemented at University of Bologna (Cesena Campus) in order to investigate the defectiveness of Power MOSFETs provided by ST Microelectronics

Amplifier and Bias Network

DUT

GateBias

Drain BiasD

S

G

Pre – Amplifier Stage

+

-

Final Amplifier Stage

+

-

HP Filter

PowerSupply

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-6V

+6V +6V

-6V-6V

+

-

-6V

Buffer+6V

Multimeter

DAQ

Numerical processing (Labview

environment)

DC

LF

R1 R2

U1

Rbias

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Sample 1Sample 2Sample 3

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- VT| (V)

Defects in the gate oxide are evaluated by means of noise measurements. Such a quantity is useful to understand the reliability of MOS structure.Drain Contact

Gate Contact

Source Contact


Outline


• Smart building




Photovoltaic system


Silicon Solar Cells: technology options overview

Interdigitated back contact (IBC)

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Passivated Emitter with Rear Locally diffused (PERL)

Metal Wrap Through (MWT) Heterojunction with intrinsic thin layer (HIT)

Single junction silicon solar cells: theoretical max efficiency 33 %

η=20 % η=23 %

η=23 %η=25 %

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• Multi-junction solar cells or tandem cells are solar cells containing several p-n junctions. • Each junction is tuned to a different wavelength of light. • Efficiency above 40 %


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• Cell thickness 0.5 – 5 μm• Low cost • Efficiency < 10 % (commercial device)• Flexible substrates• Photovoltaic integrated into the building


Thin Film Solar Cells: photon management

Nanoparticle-enhanced amorphous-silicon solar cell

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Erik C. Garnett et al., Annu. Rev. Mater. Res. 2011. 41:11.1–11.27

Photonic Crystals

Nanowire-based solar cells


Research goals at device/module level

• Lowering cost-per-watt of solar cell/modules– Investigation of new materials, architectural options,

frabrication processes – Optimization of cell design– New light trapping strategies– Optimization of contacting schemes

• Investigation of device reliability and variability• Modeling of solar cells/modules

– Feedback to industry and photovoltaic community to address new technologies and fabrication options


Simulation of PV solar cell

• Modeling by numerical simulation at device level

Optimization of light absorptance in vertical nanowires

Optimization of the geometry of a PERL solar cell


Simulation at Cell/Module level• Cell/Module level simulation can be used to investigate:

– the impact of non-uniformity on the conversion efficiency (e.g. partial shadowing, local shunting)

– System reliability (e.g. study of temperature increase in the solar cell)

0.515 V

0.550 V

0.530 V

15.6 cm

Potential distribution along solar cellLocal temperature transient in silicon solar cells (a comparison between experimental data and simulations)


22

Facilities at Cesena Campus• Solar Simulator Abet Sun 2000 (Class A Spectral

Match)

• Test station for contacting 156mm x 156mm solar cells, with temperature control.

• 4 SMU Keithley (2600 series) for IV measurement of solar cells (up to 12A)

• Semi-automatic probe station 200mm (Cascade) with thermal chuck (from -55°C to 200°C) for wafer measurements

• 4 SMU for static characterization

• Agilent 81110A Pulse Generator

• Agilent E4980A LCR meter (2MHz)

Le tecnologie elettroniche ed informatiche a servizio della gestione energetica

Technology

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