P. 0 © 2018 ROHM Co.,Ltd.

PFC DCM 2-Phase Vin=200V Iin=5A

Input :

Vin=200Vac Iin=5Aac

fps=50Hz

Output : Vo=500Vdc

Gate Drive : Vd=18V

R source=5Ω

R sink=2Ω

Q1,Q2 : SCT2450KE

SiC MOSFET (1200V 10A)

D1,D2 : SCS302AHG

SIC SBD (650V 2A)

L1,L2,L3 : 100uH

C1 : 1uF

Tj : 100℃

PFC Discontinuous Current Mode 2-Phase Vin=200V Iin=5A Simulation Circuit

If1 Iin IL1

Id1

P. 1 © 2018 ROHM Co.,Ltd.

Simulation Waveform 1

IL1, IL2, Iin Vin=200Vac Iin=5Aac Vo=500Vdc Tj=100℃

Red : IL1(A)

Green : IL2(A)

(5.00～ 5.03ms)

(8.00～ 8.03ms)

A

Expansion (5.00～5.03ms) Expansion (8.00～8.03ms)

A

A

Red : IL1(A) Green : IL2(A) Red : IL1(A)

Blue : Iin(A)

Blue : Iin(A)

Green : IL2(A)

Blue : Iin(A)

P. 2 © 2018 ROHM Co.,Ltd.

Simulation Waveform 2

Q1_Loss1, Pd1, Vds1, Id1 Vin=200Vac Iin=5Aac Vo=500Vdc Tj=100℃

Loss1(mJ) Switching Loss(off)

Conduction Loss

Pd1(kW)

Vds1(V)

Id1(A)

Loss1(mJ)

Pd1(W)

Vf1(V)

If1(A)

D1_Loss1, Pd1, Vf1, If1 Vin=200Vac Iin=5Aac Vo=500Vdc Tj=100℃

P. 3 © 2018 ROHM Co.,Ltd.

0

2

4

6

8

10

400 420 440 460 480 500 520

Po

wer

Dis

sip

ati

on

(W

)

Vo (Vdc)

90

92

94

96

98

100

400 420 440 460 480 500 520

Eff

icie

ncy (

%)

Efficiency, Power Dissipation 1

Vo : 420Vdc～500Vdc Vin=200Vac Iin=5Aac Tj=100℃

Efficiency (%)

Efficiency : 100×Po/Pin

Pd(W) Power Dissipation

Q1,Q2

D1,D2

90

92

94

96

98

100

0 200 400 600 800 1000 1200

Eff

icie

nc

y (

%)

0

2

4

6

8

10

0 200 400 600 800 1000 1200

Po

wer

Dis

sip

ati

on

(W

)

Pin (W)

Pin : 200W～1kW Vin=200Vac Vo=500Vdc Tj=100℃

Efficiency (%)

Efficiency : 100×Po/Pin

Pd(W) Power Dissipation

Q1,Q2

D1,D2

P. 4 © 2018 ROHM Co.,Ltd.

90

92

94

96

98

100

-40 -20 0 20 40 60 80 100 120 140

Eff

icie

ncy (

%)

0

2

4

6

8

10

-40 -20 0 20 40 60 80 100 120 140

Po

wer

Dis

sip

ati

on

(W

)

Tj (℃)

Efficiency, Power Dissipation 2

Efficiency (%)

Efficiency : 100×Po/Pin

Pd(W) Power Dissipation

Q1,Q2

Tj : -25℃～125℃ Vin=200Vac Iin=5Aac Vo=500Vdc

D1,D2